METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A manufacturing method of the semiconductor device is provided to increase the productivity of the process of manufacturing the semiconductor by activating the impurity ions within the substrate in a short time. A manufacturing method of the semiconductor device comprises a step for forming the poly silicon layer(23); a step for injecting impurity ions; and a step for performing the first thermal process and a step for performing the second thermal process. The poly silicon layer is formed on the substrate(20). The impurity ions are injected into the poly silicon layer. The first thermal process is repetitively performed by using the arc lamp. The second thermal process is performed through the RTA(Rapid Thermal Annealing).