A semiconductor memory device including an anti-fuse is provided to determine an inferior anti-fuse by activating a redundancy enable signal according to an address comparison signal. A fuse box(121) includes address anti-fuse circuits for outputting address fuse signals according to a program state of an anti-fuse. An address comparison part includes address comparison signal generating parts(XNOR1~XNORn). The address comparison signal generating parts generate a test address by assembling a first test signal for confirming an initial defect of the anti-fuse and 1 bit of an address signal supplied from outside, and generate an address comparison signal by comparing the test address with the address fuse signal supplied in the address anti-fuse circuit. A redundancy enable signal generating part(122) activates a redundancy enable signal in response to the address comparison signals.
