发明名称 |
Blocking dielectric bandgap engineered SONOS/MONOS memory |
摘要 |
A blocking dielectric engineered, charge trapping memory cell includes a charge trapping element that is separated from a gate by a blocking dielectric comprising a buffer layer in contact with the charge trapping element, such as silicon dioxide which can be made with high-quality, and a second capping layer in contact with said one of the gate and the channel. The capping layer has a dielectric constant that is higher than that of the first layer, and preferably comprises a high-º material. The second layer also has a conduction band offset that is relatively high. A bandgap engineered tunneling layer between the channel and the charge trapping element is provided which, in combination with the multilayer blocking dielectric described herein, provides for high-speed erase operations by hole tunneling. In an alternative, a single layer tunneling layer is used. |
申请公布号 |
EP2031643(A2) |
申请公布日期 |
2009.03.04 |
申请号 |
EP20080252762 |
申请日期 |
2008.08.20 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LAI, CHENG CHIH;LUE, HANG-TING;LIAO, CHIEN WEI |
分类号 |
H01L21/28;H01L21/8247;H01L27/115;H01L29/423 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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