Method for inductive measurement of a sheet resistance of a doping layer provided in a multi-crystalline semiconductor wafer

摘要

The method involves determining base layer resistance of a semiconductor wafer e.g. multi-crystalline silicon wafer (1), by an inductive measuring method, before inserting a doping layer i.e. n-doped emitter (2) and before the treatment of the wafer that produces potential barriers of the wafer and/or after inserting the n-doped emitter in the wafer. Parallel layer resistance is determined by the inductive measuring method after the attachment of the n-doped emitter. Layer resistance of the attached n-doped emitter is evaluated depending on the base- and parallel layer resistances.