| 摘要 |
A semiconductor device is to reduce the device size by removing the element isolation region between the collector and the base. The semiconductor substrate(101) of the first conductivity type is the first conductivity type collector area. The base region(102) of the second conductive type is formed within the collector region of the first conductivity type. The emitter region(104) of the first conductivity type is formed within the base region. The high concentration first conductivity type domain(105) for the base electrode in base region is directly contacted with the high concentration second conductive region(103) for the collector electrode in the collector region to equal the electric potential of the collector region to that of the base region.
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