| 摘要 |
A method of manufacturing the semiconductor device is provided to improve the DIBL property of transistor by performing the selective halo ion implantation on the source region of the sense amplifier transistor. The sense amplifier transistor(580) comprises the source / drain formation region. The halo ion implantation is performed to inject the halo ion to the sense amplifier transistor. Here, the ion is selectively injected to the source region(560) of the sense amplifier transistor. The halo ion implantation can be performed by using the P- type or the N- type impurity. The P- type impurity can be boron. The N- type impurity can be phosphorus or arsenic.
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