NITRIDE LIGHT EMITTING DEVICE AND METHOD OF MAKING THE SAME

摘要

A nitride light emitting device and a manufacturing method thereof are provided to perform general photolithography application without the lowering of resolution due to step difference by forming a light extraction structure in a GaN buffer layer without doping and a high refractive layer adjacent to the buffer layer. A light-emitting layer(22) is located on a first conductive semiconductor layer(21). A second conductive semiconductor layer(23) is located on the light-emitting layer. A non-conductive semiconductor layer is located on the second conductivity semiconductor layer. An electrode groove is formed from the non-conductive semiconductor layer to the surface of the second conductive semiconductor layer. A first electrode is formed in the second conductive semiconductor layer inside the electrode groove. The shape of the electrode groove is equal to the shape of the first electrode. An optical extraction structure(60) is formed on the non-conductive semiconductor layer.