| 摘要 |
<p>A method of manufacturing the semiconductor device, the solid imaging device, and the manufacturing method and electronic device of the electronic device are provided to form deeply the element isolation region on the narrow region by compensating for both end parts of the element isolation region of the first conductivity type with the impurity of the second conductive type. The first hard mask(6) having the opening is formed on the substrate(1). The sacrificial layer(8) is formed on the side of the opening of the first hard mask. The second hard mask(9) is formed in the opening. The sacrificial layer is removed. The impurity of the first conductivity type is injected through the first hard mask. The impurity of the second conductive type is injected through the first and the second hard mask.</p> |
