| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to prevent a metal bridge phenomenon by securing an interval between via holes while maintaining the minimum design rule. An interlayer insulating layer(205) is formed in an upper part of a substrate(200). The interlayer insulating layer has at least one first via-hole(211) and at least one second via hole(212). A first metal wiring(241) is formed inside the first via-hole. A second metal wiring(242) is formed inside the second via hole to be separated from the first metal wiring. The first via hole and the second via hole are arranged cross. The interlayer insulating layer includes a first trench formed on the first via-hole and a second trench(222) formed on the second via hole. The first metal wiring is formed in the first trench and the second metal wiring is formed in the second trench. |
