| 摘要 |
An image sensor and a manufacturing method thereof are provided to prevent the cross-talk and noise generation of the image sensor by forming the light absorption part between the color filters. A CMOS circuit(15) is especially formed on a semiconductor substrate(10) by the unit pixel. An interlayer insulating film(20) including the metal wiring on the semiconductor substrate is formed. The first conductivity type conductive layer(40) is formed on the interlayer insulating film. An intrinsic layer(50) including an ion implantation layer(65) is formed on the first conductivity type conductive layer. The second conductive type conductive layer(60) is formed on the intrinsic layer. An upper electrode(80) is formed on the second conductive type conductive layer. A color filter(90) having a gap region(D2) is formed on the upper electrode. An light absorption filter(100) is arranged between the color filters.
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