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发明名称
ASYMMETRIC HETERO-DOPED HIGH-VOLTAGE MOSFET (AH2MOS)
摘要
申请公布号
EP1779416(A4)
申请公布日期
2009.03.04
申请号
EP20050772270
申请日期
2005.07.14
申请人
FAIRCHILD SEMICONDUCTOR CORPORATION
发明人
CAI, JUN;HARLEY-STEAD, MICHAEL;HOLT, JIM G.
分类号
H01L21/336
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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