发明名称 |
SEMICONDUCTOR SYSTEM HAVING COMPLEMENTARY STRAINED CHANNELS |
摘要 |
<p>SEMICONDUCTOR SYSTEM HAVING COMPLEMENTARY STRAINED CHANNELS A semiconductor system is provided including providing a semiconductor substrate; forming PMOS and NMOS transistors in and on the semiconductor substrate; forming a tensile strained layer on the semiconductor substrate; and relaxing the tensile strained layer around the PMOS transistor.</p> |
申请公布号 |
SG148950(A1) |
申请公布日期 |
2009.01.29 |
申请号 |
SG20080044752 |
申请日期 |
2008.06.12 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD |
发明人 |
WOH LAI CHUNG;MENG LEE YONG;WENHE LIN;YONG LIM KHEE;WAY TEH YOUNG;LENG TAN WEE;PENG KOH HUI;SUDIJONO JOHN;CHOO HSIA LIANG- |
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