| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for producing a self-supporting substrate comprising a single crystal of a nonpolar group-III nitride of good quality at a high productivity. <P>SOLUTION: An underlayer 2A comprising a nonpolar group-III nitride is formed on a substrate 1 by a vapor phase growth method. A mask 3 which contours a striped opening 4 is formed on the underlayer. A seed crystal film 6 comprising a nonpolar group-III nitride and having a crystal orientation of axis a, axis c, and axis m is formed by a vapor phase growth method in a manner capable of covering the mask. A nonpolar group-III nitride 8 is grown on the seed crystal film 6 by a flux method. The angleθbetween the axis c of the seed crystal film 6 and the longitudinal direction Z of the opening 4 is 40°-90°. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
