| 摘要 |
Disclosed is a method of forming a wiring pattern using nano-ink, including providing a mixture solution of at least one first metal selected from the group consisting of gold, silver, and copper and at least one second metal selected from the group consisting of lead, zinc, tin, indium, cadmium, gallium, and alloys thereof, having an average particle size ranging from 5 nm to 1 mum in a reducing atmosphere; forming a wiring pattern on a base layer using the mixture solution; and thermally treating the wiring pattern at 150~300° C. in a reducing atmosphere. Even when metal having low electrical conductivity is used, a wiring pattern having high electrical conductivity can be formed. The use of the second metal having a low melting point enables thermal treatment at low temperatures, thus preventing damage to a base layer on which a wiring pattern is formed and preventing a reaction between the metal and the base layer.
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