发明名称 |
METHOD FOR CUTTING MULTILAYER SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, LIGHT EMITTING DEVICE, AND BACKLIGHT DEVICE |
摘要 |
In order to cut off, without causing any burr, a multilayer substrate having a metal layer on a front surface and a second metal layer on a back surface, a method for cutting the multilayer substrate is a method for cutting the multilayer substrate having a metal layer on the front surface and a backside electrode on the back surface, the method including the step of cutting the multilayer substrate into certain depth respectively from a metal layer side and from a backside electrode side, width of a notch on the metal layer side and width of a notch on the backside electrode side being different from each other.
|
申请公布号 |
US2009026620(A1) |
申请公布日期 |
2009.01.29 |
申请号 |
US20080119920 |
申请日期 |
2008.05.13 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
OHTA KIYOHISA |
分类号 |
B26D3/06;H01L21/302;H01L23/00;H01L33/60;H05K1/00 |
主分类号 |
B26D3/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|