发明名称 METHOD FOR CUTTING MULTILAYER SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, LIGHT EMITTING DEVICE, AND BACKLIGHT DEVICE
摘要 In order to cut off, without causing any burr, a multilayer substrate having a metal layer on a front surface and a second metal layer on a back surface, a method for cutting the multilayer substrate is a method for cutting the multilayer substrate having a metal layer on the front surface and a backside electrode on the back surface, the method including the step of cutting the multilayer substrate into certain depth respectively from a metal layer side and from a backside electrode side, width of a notch on the metal layer side and width of a notch on the backside electrode side being different from each other.
申请公布号 US2009026620(A1) 申请公布日期 2009.01.29
申请号 US20080119920 申请日期 2008.05.13
申请人 SHARP KABUSHIKI KAISHA 发明人 OHTA KIYOHISA
分类号 B26D3/06;H01L21/302;H01L23/00;H01L33/60;H05K1/00 主分类号 B26D3/06
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