发明名称 Method for Backside Metallization for Semiconductor Substrate
摘要 A wafer circuit, such as a wafer-level package, that includes a semiconductor substrate on which is fabricated one or more integrated circuits. A backside metal layer is deposited on the semiconductor substrate, and is electrically coupled to the integrated circuit by metallized vias extending through the substrate wafer. The backside metal layer is cut to provide electrically isolated backside metal layers for RF, DC and/or ground signals. An adhesion layer is deposited on the backside of the substrate before the metal layer is deposited so that the metal layer is firmly secured to the substrate, and resists peeling. The adhesion layer can be sputtered silicon, sputtered silicon nitride, silicon nitride deposited by chemical vapor deposition, nickel deposited by evaporation and nickel chromium deposited by evaporation.
申请公布号 US2009026619(A1) 申请公布日期 2009.01.29
申请号 US20070782503 申请日期 2007.07.24
申请人 NORTHROP GRUMMAN SPACE & MISSION SYSTEMS CORP. 发明人 ZENG XIANGLIN;CHANG-CHIEN PATTY
分类号 H01L23/48 主分类号 H01L23/48
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