| 摘要 |
The semiconductor device and a method of forming the same are provided to prevent the damage of the interface of the active area and element isolation film in the process of forming the subsequent bulb type recess gate region by forming the barrier insulation in the side wall of the trench after the trench for the element isolation film formation is formed. The trench isolation(175) defining the active area is formed on the top of the semiconductor substrate(100). The barrier insulation film(160) and the element isolation film are formed in the border of the semiconductor substrate. The bulb type recess gate region is formed in the active area and element isolation region. The gate is formed on the top of the bulb type recess gate region. The thickness of the barrier insulation film is 100~150Å. The barrier insulation film comprises the nitride film. The element isolation film is the SOD (Spin on Dielectric) film or the SOG(Spin on Glass) film.
|
