| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reactive ion etching chamber that contains many treatment stations excluding couplings among them, capable of plasma isolation and RF isolation. <P>SOLUTION: The treatment chamber includes two or many tandem type process regions capable of plasma isolation and RF isolation. Each of the process regions includes a cathode to which at least two RF frequencies are fed. One of them is higher, by at least twice, than the other RF frequency. So the capability of completely separated reactive ion etching is provided. A chamber of the treatment chamber is grounded. Many RF frequencies fed from the cathode by RF isolation discourage RF crosstalk and RF pulsation. Further, using a plasma limiting device prevents plasma crosstalk. A common exhaust channel acting as a ground is connected to a vacuum pump. <P>COPYRIGHT: (C)2009,JPO&INPIT |
