| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a breakdown voltage of a superjunction semiconductor device. <P>SOLUTION: The semiconductor device has a drift layer having a pillar structure in which first columnar semiconductor layers of a first conductivity-type and second semiconductor layers of a second conductivity-type are alternately and periodically formed on a semiconductor substrate. It has an element region in which several transistors composed of the first semiconductor layers and the second semiconductor layers are arranged in its central region and a termination region around the element region in which no transistor is formed. In this case, carrier lifetime of the drift layer in the terminal region is equal to or less than 1/5 of the carrier lifetime of the drift layer in the element region. <P>COPYRIGHT: (C)2009,JPO&INPIT |
