| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To minimize a switching element of a power converter. <P>SOLUTION: A semiconductor device has a diode and a high electron mobility transistor that are incorporated in the same semiconductor chip 30. A compound semiconductor layer 10 of the high electron mobility transistor is formed on a main surface (first main surface) 20a of a semiconductor substrate 20 of the diode. An anode electrode 26 of the diode is connected electrically to an anode region through a conductor buried in a via-hole 25 extending from a main surface 10a of the compound semiconductor layer 10 up to a P<SP>+</SP>region 23, which is the anode region of the main surface 20a of the semiconductor substrate 20. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
