SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory which can be formed efficiently and which employs SOI technique. SOLUTION: The semiconductor memory includes a silicon substrate 1. The silicon substrate has a first region which has an embedded insulating layer below a single-crystal silicon layer and a second region which is adjacent to the first region and does not have the embedded insulating layer below the single silicon layer. A memory cell transistor 14a has a first gate electrode, which is provided on the single-crystal silicon layer in the first region. A selection gate transistor 14b has a second gate electrode, which is provided adjacently to the memory cell transistor and partially disposed on the single-crystal silicon layer in the second region. COPYRIGHT: (C)2009,JPO&INPIT