| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor optical element, which can prevent any alteration product from remaining on the outermost layer of a multilayer semiconductor layer even when a thick dielectric film formed of an organic silane based material as a mask. SOLUTION: After a thick dielectric film 7 used as a mask is removed, a second cap layer 6 is selectively etched by using a hydrochloric acid-based etchant. In this process, an alteration product D that exists on the surface of the second cap layer 6 functions as a mask and can cause etching of the second cap layer 6 to stop when a crystal face having a low etching rate is exposed. To avoid this problem, selective etching is performed on a first cap layer 5 by using a phosphoric acid based etchant after the layer is subjected to etching using the hydrochloric acid-based etchant so as to remove the first cap layer 5 including a portion of the second cap layer 6 and the alteration product D that remain on the first cap layer 5 from a cladding layer 4. COPYRIGHT: (C)2009,JPO&INPIT
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