| 摘要 |
Disclosed is a reactor for treating flat substrates, comprising a vacuum chamber (11) and a process chamber (9). A first electrode (5) and a counter electrode (7) which form two opposite walls of the process chamber are provi ded for generating a plasma. The counter electrode can accommodate the subst rate (3). The reactor further comprises means for introducing (19, 23, 25) a nd evacuating gaseous material into and/or from process chamber, an inlet an d outlet for the vacuum chamber, and a mechanism (41, 43) for varying the re lative distance between the electrodes, a first relatively great distance be ing used when the process chamber is loaded and discharged and a second rela tively short distance being used when the treatment is performed, and/or a d evice which is associated with the counter electrode, is used for accommodat ing substrates, and is designed such that the substrate is disposed at an an gle alpha ranging from 0ø to 90ø, preferably at an angle of 1ø, 3ø, 5ø, 7ø, 9ø, 11ø, 13ø, 15ø, 17ø, 20ø, 25ø, 30ø, 40ø, 45ø, relative to the vertical di rection at least while the treatment is performed, the substrate surface tha t is to be treated facing downward.
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