A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture.
申请公布号
EP1945748(A4)
申请公布日期
2009.01.07
申请号
EP20060836276
申请日期
2006.10.12
申请人
ADVANCED TECHNOLOGY MATERIALS, INC.
发明人
RATH, MELISSA K.;BERNHARD, DAVID D.;BAUM, THOMAS H.;JIANG, PING;ZHOU, RENJIE;KORZENSKI, MICHAEL B.