| 摘要 |
A method for forming a metal wire of a semiconductor device is provided to reduce a resistance between the metal wires by forming a via plug to connect the metal wires. A first interlayer insulating film is formed on a semiconductor substrate(100). A damascene pattern(106) is formed in the first interlayer insulating film. A conductive layer is formed in an upper part of the first interlayer insulating film including the damascene pattern. A wire is formed on the damascene pattern and the via plug is formed in the conductive layer protruded higher than the first interlayer insulating film at the same time by patterning the conductive layer. The first interlayer insulating film is composed of tetra ethyl ortho silicate layer. After the damascene pattern is formed, a barrier layer is formed along the surface of the damascene pattern. The barrier layer is made of a Ti film or a TiN film. The conductive layer is made of tungsten(W). The conductive layer is formed by repeating a deposition process and an etching process.
|
