| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to simplify a process by not using an additional reflection preventing layer and removing a step through a laminated structure laminating a multifunctional hard mask including the silicon in carbon. An etched layer(203) is formed in a substrate. An organic film(204) of the polymer type containing the carbon is coated on the etched layer. The multifunctional hard mask(205) of the polymer type including the silicon contained in the carbon is formed on an organic film. The hard mask is etched. The organic film is etched by using the etched hard mask. The etched layer is etched by using the etched hard mask and the organic film as a mask. The organic film is the SOC(Spin On Carbon) film. The weight ratio of the silicon in the hard mask is 18 to 37wt%.</p> |
