Multi solar cell

摘要

The multiple solar cell comprises two layer structures out of III-IV semiconductors, germanium and/or silicon- germanium (Si xGe 1-x) that form pn-transition, subjected on a silicon substrate (2) one upon the other, and/or back side- and/or front side contacts (10). A defective structure is present within the silicon substrate in the area of the side turned to the layer structure from the semiconductor. The defective structure guides to an interference of the diamond-crystalline structure of silicon on 20% of the surface. The defective structure is an amorphous silicon layer. The multiple solar cell comprises two layer structures out of III-IV semiconductors, germanium and/or silicon- germanium (Si xGe 1-x) that form pn-transition, subjected on a silicon substrate (2) one upon the other, and/or back side- and/or front side contacts (10). A defective structure is present within the silicon substrate in the area of the side turned to the layer structure from the semiconductor. The defective structure guides to an interference of the diamond-crystalline structure of silicon on 20% of the surface. The defective structure is an amorphous silicon layer, which has an interval of 50 nm to 2 mu m from the boundary area between the silicon substrate and the layer structure to the semiconductor. The amorphous layer is formed through implanting of ions, whose concentration in the defective structure is less than 10 1>7>cm 3>. The amorphous layer has a layer thickness of 10 nm to 1 mu m. The lattice constant of the semiconductor deviates not more than 0.1% of the lattice constant of the silicon substrate. The shifting density in the emitter and base layer of the part cell is smaller than 10 6>cm ->2>. The semiconductor layers are tear free and are serially connected together by tunnel diodes (9). An independent claim is included for a procedure for the production of multiple solar cells.