| 摘要 |
<p>In a diode-type ultraviolet sensor having a laminate structure which forms a hetero junction, higher sensitivity is realized. The ultraviolet sensor has a ZnO layer (2) composed of an oxide semiconductor including ZnO; a (Ni,Zn)O layer (3) which is provided in contact with the ZnO layer (2) and which is composed of an oxide semiconductor including NiO and ZnO solid-solved therein; a first terminal electrode (5) electrically connected to the ZnO layer (2), and a second terminal electrode (6) electrically connected to the (Ni,Zn)O layer (3), and the ZnO layer (2) is used to be disposed at an ultraviolet ray (7) receiving side. The (Ni,Zn)O layer (3) is preferably formed of a sintered body.</p> |
