| 摘要 |
A method for producing, on an SiC substrate (1), SiC homoepitaxial layers (3) of the same polytype as said substrate, wherein the method comprises:
- growing said layers (3) on a surface of the SiC substrate (1), wherein said surface is inclined relative to the (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree, and further that an homoepitaxial growth is started by forming a boundary layer (2) with a thickness up to 1 µm. |
