SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device is provided with a deep source/drain region formed outside the side wall of a gate electrode in an upper region of a silicon substrate; a source/drain extended region, which is shallower than the deep source/drain region in the upper region of the silicon substrate and extends toward a channel region at a lower portion of the gate electrode from the deep source/drain region; a deep source/drain leading end region, which is of the upper portion of the deep source/drain region and extends toward the inner side from the leading end on the channel side; a deep source/drain bored region wherein at least a part of the upper portion of the deep source/drain region is bored; and a silicide layer, which is formed on the surface of the upper portion of the deep source/drain region including the deep source/drain bored region, excluding at least the deep source/drain leading end region.