| 摘要 |
<p>The object is to provide a technique for producing a highly flat surface in a semiconductor integrated circuit that utilizes copper as an interconnection metal. Thus, disclosed are: a polishing composition comprising an abrasive grain, an aliphatic carboxylic acid, a pyridinecarboxylic acid, an oxidizing agent and water and having a pH value ranging from 8.2 to 12, wherein the aliphatic carboxylic acid is at least one member selected from the group consisting of a saturated aliphatic monocarboxylic acid having a C12-16 long-chain hydrocarbon group, an unsaturated aliphatic monocarboxylic acid having a C12-22 long-chain hydrocarbon group and an unsaturated aliphatic polycarboxylic acid having a C12-22 long-chain hydrocarbon group; a method for polishing the surface of a semiconductor integrated circuit, which is characterized by polishing a copper film formed on the trench-formed surface by using the polishing composition; and a method for producing a copper interconnect for a semiconductor integrated circuit, which is characterized by forming the copper interconnect by the polishing method.</p> |
