Integrated circuit with magnetic memory

摘要

The circuit has a silicon transistor layer (110) for different logical operation functions, and a magnetic memory layer (120) for storing information required by the functions. A metal routing layer (130) has conductive lines for transmitting information between the transistor layer and the memory layer. An insulating layer (140) is placed between the transistor layer and the memory layer. The magnetic memory layer is stacked on the routing layer.