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发明名称
SEMICONDUCTOR FABRICATION PROCESS USING ETCH STOP LAYER TO OPTIMIZE FORMATION OF SOURCE/DRAIN STRESSOR
摘要
申请公布号
EP2005477(A2)
申请公布日期
2008.12.24
申请号
EP20070757316
申请日期
2007.02.22
申请人
FREESCALE SEMICONDUCTOR, INC.
发明人
ZHANG, DA;WHITE, TED;NGUYEN, BICH, YEN
分类号
H01L29/76;H01L21/762;H01L29/78;H01L29/786
主分类号
H01L29/76
代理机构
代理人
主权项
地址
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