| 摘要 |
<p>The method involves transferring a geometrically structured electric conductive transfer layer (22) to a surface of a silicon wafer (1) by an embossed film (2) or a hot embossed film in a complete or area by area manner. The embossed film is used with the geometrically structured electric conductive transfer layer, and conductance gradient is produced by transferring of the transfer layer. A sintering process is performed according to the transfer of the transfer layer, and the hot embossed film is produced in a roll-to-roll method. An independent claim is also included for a photovoltaic cell comprising an embossed film.</p> |
