MEMORY SYSTEM CAPABLE OF DETECTING BIT ERRORS DUE TO READ DISTURBANCE AND READ METHOD THEREOF
摘要
A memory system for detecting the bit error due to reading disturbance and a reading method thereof are provided to detect the bit error generated from a dummy page by simultaneously reading the dummy page. The reading method of a memory system(100) including a flash memory comprises the following steps of: reading the main page of the flash memory; detecting and correcting the bit error generated in the main page; reading a dummy page except the main page as performing the step of reading the main page; and detecting the bit error generated in the dummy page.
申请公布号
KR20080111722(A)
申请公布日期
2008.12.24
申请号
KR20070060032
申请日期
2007.06.19
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
AHN, SE JIN;KIM, YONG HYEON;CHOI, SUNG UP;KIM, YONG KYEONG