发明名称 MEMORY SYSTEM CAPABLE OF DETECTING BIT ERRORS DUE TO READ DISTURBANCE AND READ METHOD THEREOF
摘要 A memory system for detecting the bit error due to reading disturbance and a reading method thereof are provided to detect the bit error generated from a dummy page by simultaneously reading the dummy page. The reading method of a memory system(100) including a flash memory comprises the following steps of: reading the main page of the flash memory; detecting and correcting the bit error generated in the main page; reading a dummy page except the main page as performing the step of reading the main page; and detecting the bit error generated in the dummy page.
申请公布号 KR20080111722(A) 申请公布日期 2008.12.24
申请号 KR20070060032 申请日期 2007.06.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 AHN, SE JIN;KIM, YONG HYEON;CHOI, SUNG UP;KIM, YONG KYEONG
分类号 G06F11/30 主分类号 G06F11/30
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