| 摘要 |
A method of forming an organic thin film transistor comprises seeding a surface in the channel region 6 of the transistor with crystallization sites 14 prior to deposition of an organic semiconductor 8, and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites, forming crystalline domains in the channel region. An increase in crystallization in the channel region of the device increases the conductivity of the organic semiconductor in this region. The crystallization sites may comprise physical structures, such as indentations in the surface on which the organic semiconductor is to be deposited. Alternatively, the surface may be seeded using a chemical approach, such as by the formation of localized wetting domains in an anti-wetting matrix. |
