A method for etching features in an etch layer disposed below a mask on a process wafer is provided. A hydrocarbon based glue layer is deposited. The etch layer on the process wafer is etched with at least one cycle, wherein each cycle comprises depositing a hydrofluorocarbon layer over the mask and on the hydrocarbon based glue layer, wherein the hydrocarbon based glue layer increases adhesion of the hydrofluorocarbon layer and etching the etch layer.
申请公布号
WO2008127452(A3)
申请公布日期
2008.12.24
申请号
WO2007US86419
申请日期
2007.12.04
申请人
LAM RESEARCH CORPORATION;KIM, JI SOO;LEE, SANGHEON;GUPTA, DEEPAK K.;SADJADI, S.M. REZA
发明人
KIM, JI SOO;LEE, SANGHEON;GUPTA, DEEPAK K.;SADJADI, S.M. REZA