Switching element

摘要

A switching element comprising: an insulative substrate (10); a first electrode (20) and a second electrode (30) provided on one surface of the insulative substrate; and an interelectrode gap (40) which is provided between the first electrode and the second electrode, and which has a gap distance (G) on the order of nanometers in which switching phenomenon of resistance occurs by applying predetermined voltage between the first electrode and the second electrode, wherein the one surface of the insulative substrate contains nitrogen, preferably in the form of a region (10a) of silicon nitride or oxynitride.