| 摘要 |
<p>Silicon raw material is filled into a graphite crucible (10), the graphite crucible (10) is heated to form molten silicon (M), at least one rare earth element and at least one of Sn, Al, and Ge are added to molten silicon (M), and a temperature gradient is maintained in the molten silicon in which the temperature decreases from within the molten silicon toward the surface while growing an silicon carbide single crystal starting from an silicon carbide seed crystal (14) held immediately below the surface of the molten liquid.</p> |
