PN DIODE, ELECTRIC CIRCUIT DEVICE AND POWER CONVERSION DEVICE

摘要

In a SiCpn diode, the lifetime is controlled by applying an electron beam of approximately 3OE013cm-2 or more. As a result of the life time control, as shown by a current-voltage characteristic (K10) in Fig. 1, the current started to flow from approximately 32V, and the on-voltage at 100A is 50V in the SiCpn diode. At such time, the SiCpn diode has a resistance of 0.5O when the diode is turned on. The conducting region of the SiCpn diode is 0.4cm2, and is reduced to 0.2Ocm2 by increasing the on-resistance by the lifetime control. Therefore, for instance, in an electric circuit device used by connecting a diode and a resistor in series, the resistor can be eliminated.