发明名称 |
Method of fabricating polycrystalline silicon, TFT fabricated using the same, method of fabricating the TFT, and organic light emitting diode display device including the TFT |
摘要 |
<p>A method of fabricating a polycrystalline silicon (poly-Si) layer includes providing a substrate, forming an amorphous silicon (a-Si) layer on the substrate, forming a thermal oxide layer to a thickness of about 10 to 50Å on the a-Si layer, forming a metal catalyst layer on the thermal oxide layer, and annealing the substrate to crystallize the a-Si layer into the poly-Si layer using a metal catalyst of the metal catalyst layer. Thus, the a-Si layer can be crystallized into a poly-Si layer by a super grain silicon (SGS) crystallization method. Also, the thermal oxide layer may be formed during the dehydrogenation of the a-Si layer so that an additional process of forming a capping layer required for the SGS crystallization method can be omitted, thereby simplifying the fabrication process.</p> |
申请公布号 |
EP2006903(A2) |
申请公布日期 |
2008.12.24 |
申请号 |
EP20080158539 |
申请日期 |
2008.06.19 |
申请人 |
SAMSUNG MOBILE DISPLAY CO., LTD. |
发明人 |
YANG, TAE-HOON;LEE, KI-YONG;SEO, JIN-WOOK;PARK, BYOUNG-KEON;LEE, KIL-WON |
分类号 |
H01L29/786;H01L21/20;H01L21/77;H01L29/49 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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