| 摘要 |
<p>A manufacturing method of a thin film transistor, the thin film transistor and a display device using the thin film transistor are provided to manufacture a display device for performing a good image indicating output as the characteristic deviation of TFT is low. A method for manufacturing a thin film transistor(TFT) comprises: a step for successively forming a gate electrode(2), a gate insulating layer(3) and an amorphous silicon film(4) on an insulating substrate(1); a step for forming a channel passivation layer in the domain which becomes the channel region of the amorphous silicon film; a step for successively forming a n+ silicon film and metal layer on the channel passivation layer and amorphous silicon film; and a step for selectively remaining the domain corresponding to the source electrode and drain electrode by patterning the amorphous silicon film and n+ silicon film and selectively removing the domain corresponding to the channel region of the n+ silicon film and metal layer by the channel passivation layer as a etching stopper and forming area-source and drain region from the n+ silicon film and forming area-source and drain region from the metal layer.</p> |
