发明名称 METHOD FOR CLEANING PHOTOMASK
摘要 <p>A method for cleaning photomask is provided to remove foreign materials from the surface of a photomask effectively. A method for cleanning photomask comprises: a step for introducing a photomask(100) in which a mask pattern is formed on a transparent substrate(110); and a step for removing foreign materials absorbed in the photomask due to volume change by the evaporation of a liquid nitrogen, the reduction of surface tension by cooling and momentum by spraying liquid nitrogen on the photomask. A blow nozzle(230) connected to a liquid nitrogen storing tank(t210) is introduced on the photomask. The jet(250) of the liquid nitrogen is sprayed on the photomask and washes the photomask. Washing about the photomask whole-area is made by the scan movement of the nozzle.</p>
申请公布号 KR20080111873(A) 申请公布日期 2008.12.24
申请号 KR20070060365 申请日期 2007.06.20
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JO, SANG JIN
分类号 H01L21/027;H01L21/304 主分类号 H01L21/027
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