发明名称 |
INTRACAVITY UPCONVERSION LASER |
摘要 |
The present invention relates to an upconversion laser system comprising at least a semiconductor laser having a gain structure (4) arranged between a first mirror (5) and a second mirror (6), said first (5) and said second mirror (6) forming a laser cavity (7) of the semiconductor laser, and an upconversion laser for upconverting a fundamental radiation of said semiconductor laser. The upconversion laser system of the present invention is characterized in that the upconversion laser is arranged in the laser cavity (7) of the semiconductor laser. The proposed upconversion laser system has a compact design. ® KIPO & WIPO 2009
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申请公布号 |
KR20080112419(A) |
申请公布日期 |
2008.12.24 |
申请号 |
KR20087028930 |
申请日期 |
2008.11.26 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
WEICHMANN ULRICH;HEUSLER GERO;MOENCH HOLGER |
分类号 |
H01S5/06;H01S5/14;H01S5/183;H04N9/31 |
主分类号 |
H01S5/06 |
代理机构 |
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地址 |
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