PLASMA ENHANCED CYCLIC DEPOSITION METHOD OF METAL SILICON NITRIDE FILM

摘要

A cyclic thin film plating method of the metal silicon nitride thin film of 3 kinds composition is provided under the plasma atmosphere. A method for depositing for forming the metal silicon nitride thin film on the top of the substrate performs a step for evaporating the compound in the top of the substrate flowing within reactor and is heated the metal amide of the vapor phase; a step for removing to purge the metal amide of non-reactive; a step for creating M(metal)-N bond it inflows within reactor the nitrogen source gas under the plasma atmosphere; a step for creating the Si-N bond it inflows in reactor the nitrogen source gas under the plasma atmosphere; and a step for removing to purge the nitrogen source gas of non-reactive.