PHASE-CHANGE MEMORY UNIT, METHOD OF FORMING THE PHASE-CHANGE MEMORY UNIT, PHASE-CHANGE MEMORY DEVICE HAVING THE PHASE-CHANGE MEMORY UNIT AND METHOD OF MANUFACTURING THE PHASE-CHANGE MEMORY DEVICE

摘要

A phase-change memory and a manufacturing method thereof, and a phase change memory device including the same and a manufacturing method thereof are provided to reduce reset current by improving the efficiency of heating up a phase change material layer pattern. A phase-change memory unit comprises an isolation structure, a conductive construct(245), a bottom electrode(265), filling elements(277a,277b), a phase change material layer pattern(280) and an upper electrode(290). The isolation structure has an opening exposing a substrate(200). The conductive construct is formed within the opening. The bottom electrode is formed on the conductive construct. The bottom electrode has a recess. The recess is filled with the filling element. The phase change material layer pattern is formed on the bottom electrode and filling element. The upper electrode is formed on the phase change material layer pattern.