| 摘要 |
<p>A nonvolatile semiconductor memory and a manufacturing method thereof are provided to improve a data retention characteristic by thickly forming a barrier insulation film to a top insulating layer. A nonvolatile semiconductor memory has a plurality of memory strings in which a plurality of memory cells for electrically rewriting of data which is serially connected. The memory strings comprises a pillar shape semiconductor, a first charge storing layer, a first block insulating film(22) and a first conductive film. The pillar semiconductor is extended to a vertical direction about substrate. The first charge storing layer is contacted to the pillar semiconductor. The first charge storing layer accumulates electric charge. The first block insulating film contacts to the first charge storing layer. The first conductive film contacts to the first block insulating film.</p> |
