NONVOLATILE MEMORY DEVICE AND METHOD OF FORMING THE SAME

摘要

A non-volatile memory device and a method of formation thereof are provided to prevent program disturbance with an isolation gate line. A non-volatile memory device comprises a semiconductor substrate and a memory cell unit. A memory cell unit is arranged on the semiconductor substrate with a matrix type of a matrix direction. The memory cell unit comprises a turner insulating layer(110), a first memory gate and second memory gates(102a,120b), an isolation gate(130), and a word line(140). The turner insulating layer is located on the surface of the semiconductor substrate. The first memory gate and the second memory gate are arranged on the turner insulating layer with being separated from each other. The isolation gate is arranged between the first memory gate and the second memory gate. The word line covers the first memory gate, the second memory gate and the isolation gate.