| 摘要 |
A method for measuring the thickness and profile of a thin film by dispersive white-light interferometry based on reflectrometry is provided to effectively separate thickness and profile complicatedly mixed in interference patterns for measuring the thickness and profile of an ultra thin film of 100 nm or less. A method for measuring the thickness and profile of a thin film by dispersive white-light interferometry based on reflectrometry includes the steps of obtaining light intensity distribution according to the wavelength of the thin film by obtaining interference patterns of interference light, obtaining an absolute reflection rate by the light intensity distribution, obtaining the thickness(d) of the thin film by the absolute reflection rate, extracting a first phase change value according to the thickness and profile from the interference patterns of synthesized light, extracting a second phase change value according to the thickness included in the first phase change value, obtaining a third phase change value according to the profile by compensating the second phase change value from the first phase change value, and obtaining a profile value(h) from the third phase change value.
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