| 摘要 |
<p>A thin film transistor and an organic electroluminescence display using the same are provided to grow crystal particles densely by orienting crystallinity (110) at film surface side. A thin film transistor comprises a semiconductor layer(4), a source electrode, a drain electrode, and a gate electrode which are formed on an insulating substrate. The semiconductor layer includes a polysilicon thin film, which contains Si, and Ge, wherein density of Ge is thicker at the insulating substrate. Crystal orientation of the polysilicon thin film is random in a region of 20 nm at the insulating substrate and shows (110) orientation at the surface of the polysilicon thin film.</p> |
